STMicroelectronics STL120N4F6AG
$ 1.001
Production
Inventory History
3 month trend: -0.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-02-24
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
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Descriptions
Descriptions of STMicroelectronics STL120N4F6AG provided by its distributors.
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MOSFET N-CH 40V 55A POWERFLAT / N-Channel 40 V 55A (Tc) 96W (Tc) Surface Mount PowerFlat™ (5x6)
Trans MOSFET N-CH Si 40V 55A Automotive 8-Pin Power Flat EP T/R
96W(Tc) 40V 4V@ 250µA 63nC@ 10 V 1individualNChannel 40V 3.6mΩ@ 13A,10V 55A 3.7nF@25V SMD mount 5.2mm(Length)*6.4mm(width)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Terminals8
Technical
Continuous Drain Current (ID)120 A
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vds)40 V
Input Capacitance3.7 nF
Max Operating Temperature175 °C
Max Power Dissipation96 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation96 W
Rds On Max3.6 mΩ
Schedule B8541290080