STMicroelectronics STF8NM50N
$ 1.005
Production
Inventory History
3 month trend: -0.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF8NM50N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-03
Lifecycle StatusProduction (Last Updated: 2 months ago)
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Descriptions
Descriptions of STMicroelectronics STF8NM50N provided by its distributors.
N-channel 500 V, 0.73 Ohm, 5 A MDmesh II Power MOSFET in TO-220FP
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP Tube
500 V, 5 A, 0.73 OHM N-CHANNEL MDMESHII POWER MOSFET IN TO-220FP Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
20W(Tc) 25V 4V@ 250µA 14nC@ 10 V 1individualNChannel 500V 790mΩ@ 2.5A,10V 5A 364pF@50V TO-220FP Through hole mounting 16.4mm(height)
MOSFET, N CH, 500V, 5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.73ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.39%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance790 mΩ
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time8.8 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance364 pF
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation20 W
Rds On Max790 mΩ
Resistance790 MΩ
Rise Time4.4 ns
Threshold Voltage3 V
Turn-Off Delay Time25 ns
Turn-On Delay Time7 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF8NM50N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant