STMicroelectronics MJD32CT4
$ 0.261
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD32CT4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.261
$ 0.29
$ 0.29
Stock
1,031,748
580,692
580,692
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
TO-252
DPAK
DPAK
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
3 A
3 A
3 A
Transition Frequency
-
3 MHz
3 MHz
Collector Emitter Saturation Voltage
1.2 V
1.2 V
1.2 V
hFE Min
10
10
10
Power Dissipation
15 W
15 W
15 W
Related Parts
Diodes Inc.ZXTN4004KTC
Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 3.8 W, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions of STMicroelectronics MJD32CT4 provided by its distributors.
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Transistor, Bipolar, Si, PNP, Amplifier, Power, VCEO -100V, IC -3A, PD 15W, TO-252
Trans GP BJT PNP 100V 3A 15000mW 3-Pin(2+Tab) DPAK T/R / TRANS PNP 100V 3A DPAK
100V 15W 3A 10@3A4V 1.2V@3A375mA PNP +150¡Í@(Tj) TO-252-3 Bipolar Transistors - BJT ROHS
100V 15W 25@3A,4V 3A PNP DPAK Bipolar (BJT) ROHS
Bipolar Transistors - BJT PNP Gen Pur Switch
1.2V@ 375mA,3A PNP 15W 5V 50¦ÌA 100V 100V 3A DPAK£¬TO-252-3 SMD mount 2.4mm(height)
TRANSISTOR, BJT, PNP, -100V, -3A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 50hFE; Transis
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -3 / Collector-Emitter Voltage (Vceo) V = -100 / DC Current Gain (hFE) = 10 / Collector-Base Voltage (Vcbo) V = -100 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 15 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -1.2
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min10
Max Breakdown Voltage100 V
Max Collector Current3 A
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation15 W
Schedule B8541290080
Voltage Rating (DC)-100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD32CT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant