STMicroelectronics IRF630
$ 0.609
Production
Inventory History
3 month trend: +0.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Related Parts
onsemiFQP10N20CTSTU
Power Field-Effect Transistor, 9.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Descriptions
Descriptions of STMicroelectronics IRF630 provided by its distributors.
N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in D2PAK package
In a Tube of 50, IRF630 N-Channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220 STMicroelectronics
POWER MOSFET, N-CH, VDSS 200V, RDS(ON) 0.35OHM, ID 9A, TO-220,PD 75W, VGS+/-20V, GFS 4S
Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole
200V 9A 75W 400m´Î@10V4.5A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube STripFETseries, Vds=200 V, 9 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd:
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation100 W
Rds On Max400 mΩ
Resistance400 mΩ
Reverse Recovery Time170 ns
Rise Time15 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-On Delay Time10 ns
Voltage Rating (DC)200 V
Dimensions
Height15.75 mm
Lead Pitch2.54 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant