STMicroelectronics IRF620
Obsolete
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics IRF620.
CAD Models
Download STMicroelectronics IRF620 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 SnapEDA | Footprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Descriptions
Descriptions of STMicroelectronics IRF620 provided by its distributors.
Trans MOSFET N-CH 200V 6A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:75W; Rohs Compliant: Yes |Stmicroelectronics IRF620
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
Power Dissipation75 W
Rds On Max800 mΩ
Rise Time30 ns
Threshold Voltage4 V
Voltage Rating (DC)200 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics IRF620.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant