onsemi NTPF360N80S3Z
$ 1.66
Production
Inventory History
3 month trend: -17.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download onsemi NTPF360N80S3Z symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-09-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi NTPF360N80S3Z provided by its distributors.
MOSFET N-CH 800V 13A TO220FP / N-Channel 800 V 13A (Tc) 31W (Tc) Through Hole TO-220FP
MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, TO-220F
Transistor MOSFET N-Channel 800V 13A 3-Pin TO-220 Tube
Avnet Japan
Mosfet, N-Ch, 800V, 13A, To-220Fp Rohs Compliant: Yes |Onsemi NTPF360N80S3Z
Power Field-Effect Transistor, 13A I(D), 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -17.21%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)800 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation31 W
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time21.2 ns
Dimensions
Height19.55 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements