onsemi NJD35N04T4G

Name: onsemi NJD35N04T4G
Brand: onsemi
SKU: NJD35N04T4G

Power Bipolar Transistor, 4A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

$ 0.702

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU	Min	Pkg
Newark	2	NJD35N04T4G	2500	Cut Tape			1.140
Onlinecomponents.com		NJD35N04T4G	50	Bulk	1.158	0.720	0.666
Avnet		NJD35N04T4G	2500				0.504	5d
RS (Formerly Allied Electronics)		NJD35N04T4G	25	Bulk	1.490	1.310	1.310	14h
Master Electronics		NJD35N04T4G	50		1.158	0.720	0.666

Inventory History

3 month trend: +4.79%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NJD35N04T4G.

Newark

Datasheet4 pages14 years ago

Datasheet5 pages14 years ago

Datasheet4 pages15 years ago

Datasheet4 pages20 years ago

IHS

Inventory History

3 month trend:

+4.79%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiNJD35N04T4G

onsemiNJD35N04G

Price @ 1000

$ 0.702

$ 0.72

Stock

153,531

136,882

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

350 V

Max Collector Current

4 A

Transition Frequency

90 MHz

Collector Emitter Saturation Voltage

1.5 V

hFE Min

300

Power Dissipation

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-04-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi NJD35N04T4G provided by its distributors.

Power Bipolar Transistor, 4A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

4.0 A, 350 V NPN Darlington Bipolar Power Transistor

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Future Electronics

Trans Darlington NPN 350V 4A 45000mW 3-Pin(2+Tab) DPAK T/R

Verical

TRANSISTOR ARRAY, DUAL NPN, 350V, TO252; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 350V; Power Dissipation Pd: 45W; DC Collector Current: 4A; DC Current Gain hFE: 300hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell