onsemi MUN5214T1G

Name: onsemi MUN5214T1G
Brand: onsemi
SKU: MUN5214T1G

50 V, 100 mA, NPN Bipolar Digital Transistor (BRT), R1 = 10 kΩ, R2 = 47 kΩ

$ 0.038

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	MUN5214T1G	9,075	5	Cut Tape		0.093	0.065	0.049	0.049
Verical	2	MUN5214T1G	2,690	83				0.057	0.036	0.025
Arrow Electronics	2	MUN5214T1G	2,690	1		0.153	0.092	0.057	0.036	0.036
Master Electronics		MUN5214T1G	45,000	3K						0.033
Onlinecomponents.com		MUN5214T1G	45,000	3K	Bulk					0.033

Inventory History

3 month trend: -71.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5214T1G.

IHS

Datasheet14 pages9 years ago

Master Electronics

onsemi

Newark

iiiC

Inventory History

3 month trend:

-71.83%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMUN5214T1G

onsemiMUN5213T1G

Price @ 1000

$ 0.038

$ 0.019

Stock

5,631,602

7,363,236

Authorized Distributors

Mount

Case/Package

Polarity

NPN

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

hFE Min

Power Dissipation

202 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MUN5214T1G provided by its distributors.

50 V, 100 mA, NPN Bipolar Digital Transistor (BRT), R1 = 10 kΩ, R2 = 47 kΩ

onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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MUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SOT-323

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80@5mA,10V 1 NPN - Pre Biased 202mW 100mA 50V 500nA SC-70-3 Digital Transistors ROHS

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NPN Bipolar Digital Transistor (BRT)

Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R

Verical

BRT TRANSISTOR, AEC-Q101, 50V, 10K/47K; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SC-70; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

North Star Micro