onsemi MPSA63
Obsolete
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1979-06-29
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2012-02-23
LTD Date2012-08-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi MPSA63 provided by its distributors.
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans Darlington PNP 30V 1.2A 3-Pin TO-92 Bulk
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
Small Signal Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):10000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:10000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:300mA; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:MPSA63; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:b; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:30V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)-30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current-500 mA
Current Rating-1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-10 V
hFE Min5000
Max Breakdown Voltage30 V
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation625 mW
TerminationThrough Hole
Transition Frequency100 MHz
Voltage Rating (DC)-30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements