onsemi MMBTA14LT1G

Name: onsemi MMBTA14LT1G
Brand: onsemi
SKU: MMBTA14LT1G

Bipolar Transistors (BJT); MMBTA14LT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 300 mA

$ 0.051

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Future Electronics	5	MMBTA14LT1G	1,707,000	3K	Tape & Reel					0.024
Avnet	2	MMBTA14LT1G	6,000	3K						0.019	7h
Newark	3	MMBTA14LT1G	9,000	3K	Tape & Reel					0.018
Verical	6	MMBTA14LT1G	3,000	343					0.017	0.017
Arrow Electronics	3	MMBTA14LT1G	18,997	1		0.091	0.054	0.034	0.031	0.030

Inventory History

3 month trend: +9.14%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBTA14LT1G.

Official Datasheet8 years ago

Inventory History

3 month trend:

+9.14%

CAD Models

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MMBTA14LT1G provided by its distributors.

Bipolar Transistors (BJT); MMBTA14LT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 300 mA

Maritex

NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

ComSIT Distribution GmbH

Darlington Transistor, Darlington, NPN, 30 V, 225 mW, 300 mA, SOT-23, 3 Pins

Avnet

MMBT Series 30 V 300 mA NPN Silicon Darlington Amplifier Transistor - SOT-23

Future Electronics

NPN Bipolar Darlington Transistor

onsemi

BIPOLAR TRANSISTOR, NPN, 30V SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:300mW; DC Collector Current:300mA; DC Current G

element14 APAC

Darlington Npn, 300 Ma, 30 V, Full Reel; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:30V; Frecuencia De Transición Ft:125Mhz; Disipación De Potencia Pd:225Mw; Corriente De Colector Dc:300Ma; Núm. De Contactos:3 |Onsemi MMBTA14LT1G

Newark