onsemi MMBT4401LT1G

Name: onsemi MMBT4401LT1G
Brand: onsemi
SKU: MMBT4401LT1G

Transistor; Bipolar; Si; NPN; Switching; VCEO 40VDC; IC 600mA; PD 225mW; SOT-23; hFE 40

$ 0.037

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics	6	MMBT4401LT1G	2,640,000	3K	Tape & Reel					0.012
Avnet	3	MMBT4401LT1G	597,874	3K						0.010	2d
Newark	4	MMBT4401LT1G	117,902	1	Cut Tape	0.146	0.146	0.056	0.038	0.038
Verical	2	MMBT4401LT1G	1,989,000	3K						0.009
Arrow Electronics		MMBT4401LT1G	1,971,000	3K						0.009

Inventory History

3 month trend: -0.52%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBT4401LT1G.

Newark

Datasheet7 pages14 years ago

Datasheet8 pages9 years ago

Upverter

IHS

Master Electronics

iiiC

Inventory History

3 month trend:

-0.52%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMMBT4401LT1G

onsemiMMBT4401LT3G

Price @ 1000

$ 0.037

$ 0.041

Stock

53,181,915

3,469,944

Authorized Distributors

Mount

Case/Package

SOT-23

SOT-23-3

Polarity

NPN

Collector Emitter Breakdown Voltage

40 V

Max Collector Current

600 mA

Transition Frequency

250 MHz

Collector Emitter Saturation Voltage

750 mV

hFE Min

Power Dissipation

225 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MMBT4401LT1G provided by its distributors.

Transistor; Bipolar; Si; NPN; Switching; VCEO 40VDC; IC 600mA; PD 225mW; SOT-23; hFE 40

Epart123

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Avnet

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Future Electronics

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Semicontronic

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HQonline

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onsemi

TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 250hFE; Transistor Cas

Farnell

Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.

Newark