Descriptions of onsemi MMBT3904LT1G provided by its distributors.
TRANSISTOR, BIPOLAR, SI, NPN, GENERAL PURPOSE, VCEO 40VDC, IC 200MA, PD 225MW, SOT-23
Bipolar Transistors (BJT); MMBT3904LT1G; ON SEMICONDUCTOR; NPN; 3; 40 V; 200 mA
40V 300mW 100@10mA,1V 200mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
NPN SILICON GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT Series 40 V 200 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Same Part as MMBT3904LT3G, Different Packaging, onsemi NPN Transistor, SOT-23, SMD, 200mA, 40V
200 mA, 40 V NPN Bipolar Junction Transistor
Trans GP BJT NPN 40V 0.2A 300mW 3-Pin SOT-23 T/R
200 mA 40 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Bipolar Transistor, Npn, 40V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:200Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi MMBT3904LT1G.
TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transisto
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 200 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 30 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 950 / Reflow Temperature Max. °C = 260