onsemi KSA992FATA
$ 0.085
Production
Inventory History
3 month trend: -10.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-08-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi KSA992FATA provided by its distributors.
TRANS PNP 120V 0.05A TO92-3 / Bipolar (BJT) Transistor PNP 120 V 50 mA 100MHz 500 mW Through Hole TO-92-3
Trans GP BJT PNP 120V 0.05A 500mW 3-Pin TO-92 Fan-Fold
300mV@ 1mA,10mA PNP 500mW 5V 1¦ÌA 120V 120V 50mA TO-92-3 4.58mm*4.58mm
Bipolar Transistors - BJT PNP Epitaxial Xsistr
TRANSISTOR PNP 120V 0.05A TO92-3
50nA 120V 500mW 50mA 500@1mA6V 100MHz 90mV@10mA1mA PNP +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -10.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Pins3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-120 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Saturation Voltage-90 mV
Collector Emitter Voltage (VCEO)-120 V
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product100 MHz
hFE Min300
Max Breakdown Voltage120 V
Max Collector Current50 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation500 mW
Schedule B8541290080
Transition Frequency50 MHz
Dimensions
Height8.77 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements