onsemi H11B1SR2M
$ 0.296
Production
Inventory History
3 month trend: -57.65%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2001-05-14
Lifecycle StatusProduction (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 6 days ago)
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Descriptions
Descriptions of onsemi H11B1SR2M provided by its distributors.
onsemi Phototransistor Output Optocoupler, SMD, 6-Pin, MDIP Package
6-Pin DIP Photodarlington Output Optocoupler
Optocoupl DC-IN 1-CH DARL W/Base DC-OUT 6-Pin PDIP SMD White T/R
Optocoupler, Darlington, 4.17Kv, Smdip-6; |Onsemi H11B1SR2M
Darlington Output Optocoupler, 1-Element, 7500V Isolation
Optoisolator Darlington with Base Output 4170Vrms 1 Channel 6-SMD
OPTOISO 4.17KV DARL W/BASE 6SMD
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -57.65%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight810 mg
Technical
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)30 V
Current Transfer Ratio500 %
Dark Current100 nA
Fall Time18 µs
Forward Current80 mA
Forward Voltage1.5 V
Isolation Voltage4170 Vrms
Max Collector Current150 mA
Max Input Current80 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature100 °C
Max Output Voltage30 V
Max Power Dissipation150 mW
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
Output Current per Channel150 mA
Power Dissipation270 mW
Reverse Breakdown Voltage3 V
Reverse Voltage3 V
Rise Time25 µs
Schedule B8541408000
Turn-Off Delay Time18 µs
Turn-On Delay Time25 µs
Dimensions
Height4.8 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements