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Descriptions
Descriptions of onsemi FQB9N50TM provided by its distributors.
MOSFET N-CH 500V 9A D2PAK
Power Field-Effect Transistor, 9A I(D), 500V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs 500V N-Channel QFET
3.13W(Ta)，147W(Tc) 30V 5V@ 250µA 36nC@ 10 V 1individualNChannel 500V 730mΩ@ 4.5A,10V 9A 1.45nF@25V TO-263 SMD mount 10.67mm*9.65mm*4.83mm
MISCELLANEOUS MOSFETS;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance730 mΩ
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.45 nF
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max730 mΩ
Rise Time95 ns
Turn-Off Delay Time55 ns
Voltage Rating (DC)500 V
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements