FQB7N10TM by onsemi

onsemi FQB7N10TM

Mosfet N-ch 100V 7.3A D2PAK

$ 0.307

Obsolete

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	Distributor		SKU		Min	Pkg
	Rochester Electronics		FQB7N10TM	0					0.370	0.307	0.274	11h
	Worldway Electronics		FQB7N10TM	27,273	7	Bulk		0.092	0.089	0.084	0.084	11h
	Vigor Components		FQB7N10TM	1,503			0.290	0.290	0.290	0.290	0.290	1d
	Fly-Wing Technology		FQB7N10TM	1,392			0.282	0.282	0.282	0.282	0.282	1d
	Klychip		FQB7N10TM	Contact	1		0.320	0.320	0.304	0.304	0.304	>1wk

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQB7N10TM.

IHS

Datasheet11 pages25 years ago

DigiKey

Mouser

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-08-15

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-11

LTD Date2008-09-11

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Descriptions

Descriptions of onsemi FQB7N10TM provided by its distributors.

MOSFET N-CH 100V 7.3A D2PAK

Power Field-Effect Transistor, 7.3A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

N-CHANNEL POWER MOSFET

MOSFETs 100V N-Channel QFET

MISCELLANEOUS MOSFETS;

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Technical Specifications

Physical

Case/PackageTO-263-3

MountSurface Mount

Number of Terminals2

Technical

Continuous Drain Current (ID)7.3 A

Current Rating7.3 A

Drain to Source Breakdown Voltage100 V

Drain to Source Resistance350 mΩ

Drain to Source Voltage (Vdss)100 V

Element ConfigurationSingle

Fall Time19 ns

Gate to Source Voltage (Vgs)25 V

Input Capacitance250 pF

Max Operating Temperature175 °C

Max Power Dissipation40 W

Min Breakdown Voltage100 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation3.75 W

Rds On Max350 mΩ

Rise Time24 ns

Turn-Off Delay Time13 ns

Voltage Rating (DC)100 V

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQB7N10TM.

IHS

Datasheet11 pages25 years ago

DigiKey

Mouser

Compliance

Environmental Classification

Lead FreeLead Free

REACH SVHCNo

RoHSCompliant

Compliance Statements

Reach Statement8 pages11 years ago

Rohs Statement1 page12 years ago

Rohs Statement1 page14 years ago

Reach Statement2 pages13 years ago