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MOSFET N-CH 650V 3.2A TO263-3 N-Channel 650 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO263-3-2
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75W(Tc) 4V@ 250µA 14nC@ 10V 1individualNChannel 600V 3.4Ω@ 1.5A,10V 565pF@25V D2PAK SMD mount
Descriptions
Descriptions of onsemi FQB6N60TM provided by its distributors.
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
3.13W(Ta)，130W(Tc) 5V@ 250µA 25nC@ 10V 1individualNChannel 600V 1.5Ω@ 3.1A,10V 1pF@25V D2PAK SMD mount
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Field Effect Tube (MOSFET)
N-CHANNEL POWER MOSFET
MOSFETs 600V N-Channel QFET
MISCELLANEOUS MOSFETS;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)6.2 A
Current Rating6.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation3.13 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max1.5 Ω
Rise Time70 ns
Turn-Off Delay Time40 ns
Voltage Rating (DC)600 V
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements