onsemi FFPF15S60STU

Name: onsemi FFPF15S60STU
Brand: onsemi
SKU: FFPF15S60STU

Diode Ultra Fast Recovery Rectifier 600V 15A 2-Pin(2+Tab) TO-220F Rail

$ 0.653

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Rochester Electronics	FFPF15S60STU	36					0.787	0.653	0.582	10h
Farnell	FFPF15S60STU	0	1		2.023*	1.621*	1.285*	0.840*	0.840*	5h
element14 APAC	FFPF15S60STU	0	1		1.529*	1.240*	1.217*	0.983*	0.928*	1d
Win Source	WS-FFPF15S60STU	1,800	12				3.642	3.265	3.265	11h
Worldway Electronics	FFPF15S60STU	6,880	7	Tube		0.261	0.253	0.239	0.239	10h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FFPF15S60STU.

onsemi

Datasheet5 pages3 years ago

Datasheet0 pages0 years ago

IHS

Fairchild Semiconductor

Farnell

Newark

Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.10.00.80

Introduction Date2007-10-10

Lifecycle StatusObsolete (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

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Descriptions

Descriptions of onsemi FFPF15S60STU provided by its distributors.

Diode Ultra Fast Recovery Rectifier 600V 15A 2-Pin(2+Tab) TO-220F Rail

Verical

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-220AC

IHS

FFPF15S60S 15 A 600 V 35 ns Flange Mount Stealth II Rectifier - TO-220F-2L

Future Electronics

Single 15A 100Ã×A@600V 2.1V@15A 600V TO-220F-2L Diodes - General Purpose ROHS

Dasenic

DIODE, RECTIFIER, 600V, 15A, TO-220F; Diode Type:Ultrafast; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):15A; Forward Voltage VF Max:2.6V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:150A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:TO-220F; No. of Pins:2; MSL:MSL 1 - Unlimited

Farnell

The FFPF15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Fairchild Semiconductor