onsemi FDS4488
$ 0.456
Obsolete
Inventory History
3 month trend: -0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-01-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Descriptions
Descriptions of onsemi FDS4488 provided by its distributors.
Single N-Channel 30 V 22 O Surface Mount Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 7.9A 8-Pin SOIC N T/R
30 V N-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 0.0079A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7.9 mA
Current Rating7.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance927 pF
Max Operating Temperature175 °C
Max Power Dissipation1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max22 mΩ
Rise Time7.5 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time7.4 ns
Voltage Rating (DC)30 V
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements