onsemi FDN86265P
$ 0.433
Production
Inventory History
3 month trend: +279%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-05-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDN86265P provided by its distributors.
P-Channel PowerTrench® MOSFET -150V, -0.8A, 1.2Ω
Power MOSFET, P Channel, 150 V, 800 mA, 0.85 ohm, SuperSOT, Surface Mount
MOSFET, P-CH, -150V, -0.8A, SUPERSOT-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -800mA; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +279%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)800 mA
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time9.9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation600 mW
Rds On Max1.2 Ω
Rise Time2.2 ns
Schedule B8541290080
Turn-Off Delay Time7.9 ns
Turn-On Delay Time5.7 ns
Dimensions
Height1.12 mm
Length2.92 mm
Width1.4 mm
Compliance
Environmental Classification
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Compliance Statements