onsemi FDMC86324
$ 0.72
Production
Inventory History
3 month trend: +6.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDMC86324 provided by its distributors.
N-Channel Power Trench® MOSFET 80V, 20A, 23mΩ
Power Field-Effect Transistor, 7A I(D), 80V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 80V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0191ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +6.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageQFN EP
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance965 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.3 W
Rds On Max23 mΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage3.1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time8 ns
Dimensions
Height1.15 mm
Length3.3 mm
Width3.3 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements