onsemi FDBL0200N100
$ 5.202
Production
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Min
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Inventory History
3 month trend: -6.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-09-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi FDBL0200N100 provided by its distributors.
MOSFET N-CH 100V 300A 8HPSOF / N-Channel 100 V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF
N-Channel PowerTrench® MOSFET, 100V, 300A, 2.0mΩ
Power Field-Effect Transistor, 300A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A
429W(Tc) 20V 4.5V@ 250µA 133nC@ 10 V 1individualNChannel 100V 2mΩ@ 80A,10V 300A 9.76nF@50V HPSOF-8 SMD mount 2.4mm(height)
Chip Resistor - Surface Mount 330Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 330 OHM 1% 1/10W 0603
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -6.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Terminals2
Weight850.0521 mg
Technical
Continuous Drain Current (ID)300 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation429 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation429 W
Schedule B8541290080
Turn-Off Delay Time36 ns
Turn-On Delay Time31 ns
Dimensions
Height2.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements