onsemi D44H8
Production
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.479
$ 0.479
Stock
16,205
142,189
142,189
Authorized Distributors
1
6
6
Mount
Through Hole
-
-
Case/Package
TO-220
TO-220
TO-220
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
60 V
Max Collector Current
8 A
10 A
10 A
Transition Frequency
50 MHz
50 MHz
50 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
40
40
40
Power Dissipation
50 W
2 W
2 W
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 1 week ago)
LTB Date2009-12-19
LTD Date2010-06-19
Related Parts
onsemiKSE44H11TU
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
onsemiKSC5302DTU
TRANS NPN 400V 2A TO220-3 / Bipolar (BJT) Transistor NPN 400 V 2 A 50 W Through Hole TO-220-3
Descriptions
Descriptions of onsemi D44H8 provided by its distributors.
Tube Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 4A 1V 10A 60W 50MHz
NPN POWER AMPLIFIER Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, NPN, 10 A, 60 V
Trans GP BJT NPN 60V 8A 3-Pin(3+Tab) TO-220AB Rail
Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:60W; DC Current Gain Min (hfe):40; Package/Case:TO-220; C-E Breakdown Voltage:60V; DC Collector Current:8A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, 8A 60V TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 60W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transistor Ca
TRANSISTOR, NPN, 8A 60V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:60mW; DC Collector Current:8A; DC Current Gain hFE:60; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:8A; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:60mW; Termination Type:Through Hole; Transistor Type:Power
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)60 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)650 mV
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min40
Max Breakdown Voltage60 V
Max Collector Current8 A
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation50 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)60 V
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements