onsemi BUB323ZT4G

Name: onsemi BUB323ZT4G
Brand: onsemi
SKU: BUB323ZT4G

BUB323Z Series 350 V 10 A 150 W NPN SMT Silicon Power Darlington - D2PAK-3

$ 1.31

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		BUB323ZT4G	1,600	800					1.427	1.337	2d
Newark		BUB323ZT4G	566	1	Cut Tape	4.020	2.860	2.220	2.050	1.980
Arrow Electronics	2	BUB323ZT4G	558	1		1.477	1.454	1.408	1.361	1.361
Verical	3	BUB323ZT4G	1,600	800					1.275	1.275
Rochester Electronics		BUB323ZT4G	518					1.240	1.110	1.050	2h

Inventory History

3 month trend: -20.08%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BUB323ZT4G.

Farnell

Datasheet9 pages11 years ago

Datasheet4 pages19 years ago

Newark

element14 APAC

Inventory History

3 month trend:

-20.08%

CAD Models

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi BUB323ZT4G provided by its distributors.

BUB323Z Series 350 V 10 A 150 W NPN SMT Silicon Power Darlington - D2PAK-3

Future Electronics

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

NPN Darlington Bipolar Power Transistor

onsemi

Trans Darlington NPN 350V 10A Automotive 3-Pin(2+Tab) D2PAK T/R

Fly-Wing Technology

BIPOLAR TRANSISTOR, DARLI.; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 150W; DC Collector Current: 10A; DC Current Gain hFE: 500hFE; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 1.6V; Current Ic Continuous a Max: 10A; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 0.5; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power Bipolar

Farnell