onsemi BD682STU
$ 0.225
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
Related Parts
onsemiKSA1220YSTU
Tube Through Hole PNP KSA1220 Bipolar (BJT) Transistor 160 @ 300mA 5V 1.2A 1.2W 175MHz
Descriptions
Descriptions of onsemi BD682STU provided by its distributors.
4.0 A, 100 V PNP Darlington Bipolar Power Transistor
Bipolar Transistor, Pnp, 100V, 4A, To225 Rohs Compliant: Yes |Onsemi BD682STU
PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, PNP, 100V, 4A, TO225;
PNP Epitaxial Silicon Transistor Product Highlights: Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectively
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-126
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)-100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage-2.5 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current-4 A
Current Rating-4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min750
Max Breakdown Voltage100 V
Max Collector Current4 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation14 W
Voltage Rating (DC)-100 V
Dimensions
Height14.2 mm
Length8 mm
Width3.25 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements