onsemi BC848ALT1G

Name: onsemi BC848ALT1G
Brand: onsemi
SKU: BC848ALT1G

on Semi BC848ALT1G NPN Bipolar Transistor, 0.1 A, 30 V, 3-PIN SOT-23

$ 0.037

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SKU

Min

Pkg

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Future Electronics

BC848ALT1G

90,000

Tape & Reel

USD

USD

Cut Tape

USD

USD

USD

3 month trend: -20.30%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BC848ALT1G.

IHS

Datasheet15 pages4 years ago

JRH Electronics

onsemi

Upverter

Newark

Inventory History

3 month trend:

-20.30%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi BC848ALT1G provided by its distributors.

ON SEMI BC848ALT1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SOT-23

RS (Formerly Allied Electronics)

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

Semicontronic

BC Series 30 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23

Future Electronics

Trans GP BJT NPN 30V 0.1A 300mW 3-Pin SOT-23 T/R

Verical

Bipolar Transistors - BJT 100mA 30V NPN

Digi-ic_SMART PIONEER

Transistor NPN 30V 100mA HFE:110 SOT23

RS APAC

onsemi NPNTransistor, SOT-23encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage30 V

UnikeyIC

TRANSISTOR, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE;

Farnell

Bipolar Transistor, Npn, 30V Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC848ALT1G.

Newark

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260

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