NXP Semiconductors PDTC114ET
Production
Inventory History
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CAD Models
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CAD Models
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2004-06-30
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Descriptions
Descriptions of NXP Semiconductors PDTC114ET provided by its distributors.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
50 V, 100 MILLI AMPERE NPN resistor-equipped transistor; R1 = 10 KILO OHM, R2 = 10 KILO OHM
Trans Digital BJT NPN 50V 100mA 3-Pin TO-236AB
100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Bias Resistor Transistor; Transistor Type:Small Signal Digital (BRT); Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Continuous Collector Current, Ic:100mA; Base Input Resistor, R1:10kohm ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:150mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:5mA; Hfe Min:30; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:p/t16; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 30 / Power Dissipation (Pd) mW = 250 / Typical Input Resistor kOhm = 10 / Typical Resistor Ratio kOhm = 1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 10 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 150 / Reflow Temperature Max. °C = 260 / Operating Frequency MHz = 230
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)50 V
hFE Min30
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance Statements