NXP Semiconductors IRF640
Obsolete
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-08-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descriptions
Descriptions of NXP Semiconductors IRF640 provided by its distributors.
Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
16 A 200 V 0.18 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/Package200
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Current15 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vds)200 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rise Time51 ns
Voltage200 V
Voltage Rating (DC)200 V
Dimensions
Height0 m
Length0 m
Width0 m