Nexperia PUMH9,115

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kOhm, R2 = 47 kOhm

Bipolar Transistors (BJT); PUMH9,115; NEXPERIA; NPN; 50 V; 100 mA; 6

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin TSSOP T/R

PUMH9 Series 50 V 100 mA Surface Mount NPN Small Signal Transistor - SOT-363

100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR

2 NPN pre-biased (Dual) 300mW 100mA 50V SOT-363 Digital Transistors ROHS

Nexperia NPNdigital transistor, UMTencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V

Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMH9 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 100mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Full Power Rating Temperature: 25°C; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 10kohm; Resistance R1 PNP: 10kohm; Resistance R2: 47kohm; Transistor Case Style: SOT-363; Voltage Vcbo: 50V