Nexperia BCP55,115

Name: Nexperia BCP55,115
Brand: Nexperia
SKU: BCP55,115

TRANS NPN 60V 1A SOT223 / Bipolar (BJT) Transistor NPN 60 V 1 A 180MHz 1.35 W Surface Mount SOT-223

$ 0.215

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark	2	BCP55,115	967	1	Cut Tape	0.773	0.482	0.482	0.482	0.482
Verical	2	BCP55,115	1,204,972	2658						0.126
Rochester Electronics		BCP55,115	1,971,272					0.136	0.113	0.101	2d
TME	2	BCP55.115	112	1		0.359	0.212	0.161	0.161	0.161	10h
DigiKey	2	1727-6203-1-ND	6	1	Cut Tape	0.440	0.269	0.269	0.269	0.269

Inventory History

3 month trend: -2.03%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Nexperia BCP55,115.

IHS

Datasheet12 pages3 years ago

element14 APAC

Newark

ODG (Origin Data Global)

Farnell

Inventory History

3 month trend:

-2.03%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date1997-09-01

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Descriptions

Descriptions of Nexperia BCP55,115 provided by its distributors.

TRANS NPN 60V 1A SOT223 / Bipolar (BJT) Transistor NPN 60 V 1 A 180MHz 1.35 W Surface Mount SOT-223

Win Source

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

IHS

BIPOLAR TRANSISTOR, MED POWER, NPN, 60V, 1A, 4-SOT-223

element14 APAC

BCP55 Series 60 V 1 A SMT NPN Medium Power Transistor - SOT-223

Future Electronics

60V 1.35W 63@150mA,2V 1A NPN SOT-223-3 Bipolar (BJT) ROHS

EBEE

Bipolar Junction Transistors - BJT; NEXPERIA; BCP55, 115; NPN; 4; 640 mW

Maritex

Trans GP BJT NPN 60V 1A Automotive 4-Pin(3+Tab) SC-73 T/R

Verical

General Purpose Transistors NPN Ic=1A Vceo=60V hfe=63~250 P=1.35W SOT223

HQonline

BIPLR TRANSISTOR, MED PWR, NPN, 60V, 1A,

Farnell

Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Transition Frequency Typ, ft:180MHz; Power Dissipation, Pd:640mW; DC Collector Current:1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes

Newark