Texas Instruments LPC662IM

Op Amp, 110mV/μs Slew Rate, 350kHz BW, 63dB Gain, 2 Ch, 6.3mV Offset, SOIC, SMD, 4.9mm × 3.9mm × 1.45mm
$ 0.561

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Datasheets & Documents

Download datasheets and manufacturer documentation for Texas Instruments LPC662IM.

Newark

Datasheet18 pages25 years ago

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Descriptions

Descriptions of Texas Instruments LPC662IM provided by its distributors.

Op Amp, 110mV/μs Slew Rate, 350kHz BW, 63dB Gain, 2 Ch, 6.3mV Offset, SOIC, SMD, 4.9mm × 3.9mm × 1.45mm
Operational Amplifier, 2 Func, 6300uV Offset-Max, CMOS, PDSO8
OP Amp Dual GP R-R O/P 15.5V 8-Pin SOIC N Rail
OP AMP, DUAL CMOS, SMD, SOIC8, 662; Op Amp Type:Low Input Bias; No. of Amplifiers:2; Slew Rate:0.11V/µs; Supply Voltage Range:5V to 15V; Amplifier Case Style:SOIC; No. of Pins:8; Bandwidth:350kHz; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Amplifier Type:CMOS; Base Number:662; Gain Bandwidth:1.4MHz; I/O Type:Rail-Rail Outputs; IC Generic Number:662; Input Offset Voltage Max:6.3mV; Logic Function Number:662; Operating Temperature Range:-40°C to +85°C; Operational Amplifier Features:CMOS; Supply Voltage + Nom:5V; Supply Voltage Max:15.5V; Supply Voltage Min:4.75V

Manufacturer Aliases

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