Littelfuse IXFN30N120P
$ 55.925
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | IXFN30N120P | 0 | 1 | 19h | ||||||||
| TTI | IXFN30N120P | 0 | 300 | Tube | 8h | |||||||
| Newark | IXFN30N120P | 0 | 300 | |||||||||
| Onlinecomponents.com | IXFN30N120P | 0 | 75 | Bulk | ||||||||
| RS (Formerly Allied Electronics) | IXFN30N120P | 0 | 10 | Bulk | 23h |
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Littelfuse IXFN30N120P provided by its distributors.
MOSFET N-CH 1200V 30A SOT-227B / N-Channel 1200 V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B
Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube |Littelfuse IXFN30N120P
MOSFET N-CH 1200V 30A SOT-227B
Power Field-Effect Transistor, 30A I(D), 1200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
890W(Tc) 30V 6.5V@1mA 310nC@ 10 V 1N 1.2KV 350m¦¸@ 500mA,10V 30A 19nF@25V SOT-227B , 38.23mm*25.42mm*9.6mm
Polar™ Series - 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), SOT-227B, RoHS
Littelfuse SCT
Manufacturer Aliases
Littelfuse has several brands around the world that distributors may use as alternate names. Littelfuse may also be known as the following names:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
Technical Specifications
Physical
Case/PackageSOT-227-4
Contact PlatingNickel
MountChassis Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance19 nF
Max Operating Temperature150 °C
Max Power Dissipation890 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation890 W
Rds On Max350 mΩ
Reverse Recovery Time300 ns
Rise Time60 ns
Turn-Off Delay Time95 ns