Infineon ISC130N20NM6ATMA1

N-Channel 200 V 9.8A (Ta), 88A (Tc) 3W (Ta), 242W (Tc) Surface Mount PG-TSON-8-3

Trans MOSFET N-CH 200V 9.8A 8-Pin TSON EP T/R

Power Field-Effect Transistor, 88A I(D), 200V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon ISC130N20NM6ATMA1 MOSFET

3W(Ta)，242W(Tc) 4.5V@ 135µA 58nC@ 10 V 1individualNChannel 200V 11.7mΩ@ 50A,15V 88A 3.9nF@100V SMD mount

MOSFET, N-CHANNEL, 200V, 88A, TSON-8;

ISC130N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS.