Infineon IRS2005STRPBF

MOSFET Driver, High & Low Side, 10 V to 20 V supply, 0.6 A out, 160 ns /150 ns on/off, SOIC-8

IC GATE DRVR HALF-BRIDGE 8SOIC / High and Low Side Driver

200 V high-side and low-side gate driver IC with VCC & VBS UVLO ensuring reliable start-up operation, SOIC 8N, RoHS

Gate Drivers The factory is currently not accepting orders for this product

Half Bridge 600mA 10V~20V 290mA SOIC-8 Gate Drive ICs ROHS

Tape & Reel (TR) Half-Bridge 1996 Non-Inverting gate driver 70ns 30ns -40C~150C TJ 290mA 600mA 0.8V 2.5V

Power MOSFET & IGBT Driver, Hi/Lo Sides, 8-pin SOIC, T/R

MOSFET/IGBT DRIVER, HIGH/LOW SIDE, SOIC8; Driver Configuration: High Side and Low Side; Peak Output Current: -; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 160ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

EiceDRIVER™ 200 V high and low side gate driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead MLPQ 4x4 package.The IRS2005 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.