Infineon IRLS3036PBF

Name: Infineon IRLS3036PBF
Brand: Infineon
SKU: IRLS3036PBF

Transistor: N-MOSFET; unipolar; HEXFET; 60V; 270A; 380W; D2PAK

$ 3.06

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRLS3036PBF	48					1.880	1.680	1.580	6h
RS (Formerly Allied Electronics)	IRLS3036PBF	0	250	Bulk				4.440	4.440	22h
Farnell	IRLS3036PBF	0	1		3.568*	3.568*	2.533*	2.370*	2.370*	1d
Microchip USA	IRLS3036PBF	243	150	Tray				13.000	13.000	22h
Win Source	WS-IRLS3036PBF	1,800	12				3.816	3.421	3.421	7h

Inventory History

3 month trend: Restocked

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLS3036PBF.

Official Datasheet12 years ago

Inventory History

3 month trend:

Restocked

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLS3036PBF provided by its distributors.

Transistor: N-MOSFET; unipolar; HEXFET; 60V; 270A; 380W; D2PAK

Fly-Wing Technology

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive

Infineon

Trans MOSFET N-CH 60V 270A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH 60V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC