Infineon IRFS7437PBF

Name: Infineon IRFS7437PBF
Brand: Infineon
SKU: IRFS7437PBF

Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK

$ 1.69

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFS7437PBF	0	400	Bulk				1.690	1.690	22h
Farnell	IRFS7437PBF	0	1		2.060*	1.737*	1.387*	0.940*	0.940*	9h
Component Stockers USA	IRFS7437PBF	357			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	WS-IRFS7437PBF	8,000	35				1.380	1.122	1.122	10h
Worldway Electronics	IRFS7437PBF	11,692	7	Tube		1.791	1.758	1.690	1.656	9h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS7437PBF.

IHS

Datasheet13 pages11 years ago

Datasheet12 pages11 years ago

Future Electronics

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-09-07

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRFS7437PBF provided by its distributors.

Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK

Win Source

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

StrongIR FET Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N-CH, 40V, 195A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Farnell

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon