Infineon IRFHM830TRPBF

Name: Infineon IRFHM830TRPBF
Brand: Infineon
SKU: IRFHM830TRPBF

Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

$ 0.344

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFHM830TRPBF	3,860	1		0.497	0.477	0.421	0.334	0.334
Rochester Electronics		IRFHM830TRPBF	29,853					0.456	0.379	0.337	21h
RS (Formerly Allied Electronics)		IRFHM830TRPBF	0	4K	Bulk					1.380	13h
Farnell		IRFHM830TRPBF	2,980	1		1.545*	0.994*	0.712*	0.502*	0.502*	21h
Microchip USA		IRFHM830TRPBF	109	600	Tray				2.412	2.412	7d

Inventory History

3 month trend: -2.06%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFHM830TRPBF.

IHS

Datasheet10 pages0 years ago

Datasheet9 pages11 years ago

element14 APAC

Farnell

Inventory History

3 month trend:

-2.06%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-09-09

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRFHM830TRPBF provided by its distributors.

Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

Infineon SCT

Transistor: N-MOSFET; unipolar; HEXFET; 30V; 21A; 2.7W; PQFN3.3X3

Epart123

Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

Avnet

IRMOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon