Infineon IRFE130
$ 58.03
Production
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 58.03
$ 51.6
$ 51.6
Stock
247
9,193
9,193
Authorized Distributors
1
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
LCC
-
-
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
8 A
8 A
8 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
25 W
25 W
25 W
Input Capacitance
-
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IRFE130 provided by its distributors.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package, LCC-18
Infineon SCT
Trans MOSFET N-CH 100V 8A 18-Pin LLCC
N Channel Mosfet, 100V, 8A, Lcc
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Body MaterialCeramic
Case/PackageLCC
Contact PlatingLead, Tin
MountSurface Mount
Number of Pins18
Number of Terminals15
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance207 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation22 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance200 mΩ
Power Dissipation25 W
Schedule B8541290080
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance Statements