Infineon IRF7805PBF
$ 0.45
Obsolete
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Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-12-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Related Parts
Descriptions
Descriptions of Infineon IRF7805PBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.2Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-12V
Single N-Channel 30 V 11 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
2.5W(Ta) 12V 3V@ 250¦ÌA 31nC@ 5 V 1N 30V 11m¦¸@ 7A,4.5V 13A SOIC-8 4.9mm*3.9mm*1.75mm
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7805PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:4.5V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance11 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max11 mΩ
Resistance11 MΩ
Rise Time20 ns
Threshold Voltage3 V
Turn-Off Delay Time38 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements