Infineon IRF7480MTRPBF
$ 1.255
Production
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Min
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Inventory History
3 month trend: +2.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-30
Lifecycle StatusProduction (Last Updated: 1 month ago)
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40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package, MG-WDSON-8, RoHS
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N-channel 30 V, 0.0011 Ohm typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
Descriptions
Descriptions of Infineon IRF7480MTRPBF provided by its distributors.
On a Reel of 4800, N-Channel MOSFET, 330 A, 40 V, 6 + Tab-Pin ME Infineon IRF7480MTRPBF
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package, MG-WDSON-8, RoHS
Infineon SCT
Single N-Channel 40 V 1.2 mOhm 123 nC HEXFET® Power Mosfet - DirectFET®
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +2.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins10
Number of Terminals6
Technical
Continuous Drain Current (ID)217 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time58 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.2 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation96 W
Rds On Max1.2 mΩ
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time21 ns
Dimensions
Height700 µm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements