Infineon IRF7406PBF

Name: Infineon IRF7406PBF
Brand: Infineon
SKU: IRF7406PBF

Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.045 Ohm; Id -5.8A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7406PBF	0	3800	Bulk					0.980	10h
Farnell	IRF7406PBF	0	1		1.234*	0.991*	0.702*	0.491*	0.481*	20h
Win Source	WS-IRF7406PBF	2,570	3			15.037	12.612	12.612	12.612	22h
Worldway Electronics	IRF7406PBF	13,140	7	Tube		0.537	0.521	0.494	0.494	21h
ICPartonline	IRF7406PBF	39,241			0.511	0.486	0.460	0.435	0.409	>1wk

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7406PBF.

IHS

Datasheet10 pages21 years ago

Datasheet9 pages21 years ago

TME

RS (Formerly Allied Electronics)

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7406PBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7406; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

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