Infineon IRF7304PBF
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-08-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Descriptions
Descriptions of Infineon IRF7304PBF provided by its distributors.
Transistor MOSFET P Channel 20 Volt 4.3 Amp 8 Pin SOIC Tape and Reel
Dual P-Channel 20 V 0.09 Ohm 22 nC HEXFET® Power Mosfet - SOIC-8
HEXFET Power MOSFET Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:17A; Row Pitch:6.3mm; SMD Marking:IRF7304PBF; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.3 A
Current Rating-4.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time33 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance610 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance90 mΩ
Package Quantity3800
Power Dissipation2 W
Rds On Max90 mΩ
Recovery Time84 ns
Resistance90 mΩ
Rise Time26 ns
Threshold Voltage-700 mV
Turn-Off Delay Time51 ns
Turn-On Delay Time8.4 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements