Infineon IRF7303PBF

Transistor MOSFET Negative Channel 30 Volt 4.9A 8-Pin SOIC T/R

Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

2W 20V 1individualNChannel 30V 50mΩ SOIC SMD mount 5.28mm(Length)*1.75mm(height)

HEXFET POWER MOSFET Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Dual N Channel Mosfet, 30V, Soic; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Infineon Technologies IRF7303PBF

MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7303; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V