Infineon IPN95R3K7P7ATMA1

N-Channel 950 V 2 A 6 W CoolMOS P7 SJ Power Device MOSFET - PG-SOT-223

Transistor MOSFET N-CH 950V 2A 3-Pin SOT-223 T/R

Infineon NChannelMOSTube, Vds=950 V, 2 A, SOT-223encapsulation, surface mount, 3Pin

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market, PG-SOT223-4-3, RoHS

MOSFET, 950V, 2A, 150DEG C, 6W; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:950V; On Resistance Rds(on):3.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power D

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.