Infineon IPD80R750P7ATMA1

MOSFET N-CH 800V 7A TO252-3 / N-Channel 800 V 7A (Tc) 51W (Tc) Surface Mount PG-TO252-3

Transistor MOSFET N-CH 800V 7A 3-Pin TO-252 T/R

A new benchmark in efficiency and thermal performance, PG-TO252-3, RoHS

Trans MOSFET N-CH 800V 7A 3-Pin(2+Tab) DPAK T/R

MOSFET N-CH 800V COOLMOS TO252-3

Infineon IPD80R750P7ATMA1 MOSFET

Infineon NChannel EnhancedMOSTube CoolMOS P7series, Vds=800 V, 7 A, TO-252encapsulation, surface mount, 3Pin

Mosfet, N-Ch, 800V, 7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.64Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.