Infineon IPD60R600PFD7SAUMA1

CoolMOS MOSFET N-Channel Enhancement Mode 650V 6A 3-Pin DPAK Surface Mount

IPD60R600PFD7S Series 600 V 6 A 0.6 Ohm Single N-Channel MOSFET - TO-252-3

Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R

Power Field-Effect Transistor, 6A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252

Infineon IPD60R600PFD7SAUMA1 MOSFET

MOSFET Vds=650V 14A PG-TO252-3 SMD

场效应管, MOSFET, N沟道, 600V, 6A, TO-252;

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R600PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R600PFD7S in a TO-252 DPAK package features RDS(on) of 600mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer.This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.