Infineon IPD60R360P7SAUMA1

Power MOSFET, N Channel, 600 V, 9 A, 360 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount

Dual N-Ch MOSFET 600V 6A 360mΩ@10V 13nC@10V 555pF@400V TO-252 SMD 6.5mm × 610cm × 2.3mm

Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

MOSFET, N-CH, 600V, 9A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 360 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-3 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 41