Infineon IPD60R280P7SAUMA1
$ 0.606
Production
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Inventory History
3 month trend: +22.53%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD60R280P7SAUMA1.
CAD Models
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Supply Chain
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-06-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IPD60R280P7SAUMA1 provided by its distributors.
Power MOSFET, N Channel, 600 V, 12 A, 0.214 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 600V, 12A, 53W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.214ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +22.53%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation53 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance280 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation53 W
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Dimensions
Height2.55 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD60R280P7SAUMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements