Infineon IPD11DP10NMATMA1

Power MOSFET, P Channel, 100 V, 22 A, 0.0889 ohm, TO-252 (DPAK), Surface Mount

Infineon PChannelMOSFETTube, Vds=100 V, 22 A, DPAK (TO-252)encapsulation, surface mount, 3Pin

Trans MOSFET P-CH 100V 3.4A 3-Pin(2+Tab) DPAK T/R

Infineon IPD11DP10NMATMA1 MOSFET

Power Field-Effect Transistor, 22A I(D), 100V, 0.111ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

2.5 mm 3 W 1 6.92 ns 51.25 ns 175 °C -55 °C 88.9 mΩ

TRENCH >=100V PG-TO252-3 / P-Channel 100 V 3.4A (Ta), 22A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TO252-3

场效应管, MOSFET, P沟道, 100V, TO-252-3;

OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.