Infineon IPB65R041CFD7ATMA1
$ 5.067
Production
Price and Stock
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SKU
Min
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Inventory History
3 month trend: -3.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB65R041CFD7ATMA1.
CAD Models
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Supply Chain
Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-10-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon IPB65R041CFD7ATMA1 provided by its distributors.
Transistor MOSFET N-Channel 650V 50A 3-Pin D2PAK T/R
N-Channel 650 V 50 A 227 W 41 mOhm Surface Mount Mosfet - PG-TO-263-3
Infineon NChannelMOSTube CoolMOSseries, Vds=700 V, 50 A, D2PAK （TO-263）encapsulation, surface mount, 3Pin
4.7 mm D2PAK 227 W 1 34 ns 115 ns 150 °C -55 °C
Infineon IPB65R041CFD7ATMA1 MOSFET
场效应管, MOSFET, N沟道, 650V, 50A, TO-263;
Power Field-Effect Transistor, 50A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -3.16%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)700 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation227 W
Turn-Off Delay Time115 ns
Turn-On Delay Time34 ns
Dimensions
Height4.7 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB65R041CFD7ATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements